Effect of induced defects on conduction mechanisms of noble-gas-implanted ScN thin films

Noble-gas implantation was used to introduce defects in n-type degenerate ScN thin films tailor their transport properties. The electrical resistivity increased significantly with the damage levels created, while electron mobility decreased regardless of nature ion implanted and doses. However, property characterizations showed that two types were formed during implantation, named point-like complex-like depending on temperature stability. changed conduction mode from metallic-like semiconducting behavior. In low range, where both groups present, dominant operative mechanism variable range hopping mode. Beyond a about 400 K, started recover an activation energy 90 meV resulting decrease resistivity, independent incident ion. were, therefore, only remaining group after annealing above 700 K. These latter, thermally stable at least up 750 introduced deep acceptor bandgap increase higher carrier scattering keeping behavior sample. generation defects, as determined by measurements, appeared occur through similar within single collision cascade.